ASRock H510M-HDV — параметры задержки и тайминги для оперативной памяти DDR4 [49/76]

Превью страниц Страница 49 / 76

English

H510M-HDV

H510M-HVS

RAS to RAS Delay (tRRD_L)

e number of clocks between two rows activated in dierent banks of the same

rank.

RAS to RAS Delay (tRRD_S)

e number of clocks between two rows activated in dierent banks of the same

rank.

Write to Read Delay (tWTR_L)

e number of clocks between the last valid write operation and the next read command to

the same internal bank.

Write to Read Delay (tWTR_S)

e number of clocks between the last valid write operation and the next read command to

the same internal bank.

Read to Precharge (tRTP)

e number of clocks that are inserted between a read command to a row pre-

charge command to the same rank.

Four Activate Window (tFAW)

e time window in which four activates are allowed the same rank.

CAS Write Latency (tCWL)

Congure CAS Write Latency.

Third Timing

tREFI

Congure refresh cycles at an average periodic interval.

tCKE

Congure the period of time the DDR4 initiates a minimum of one refresh

command internally once it enters Self-Refresh mode.

Turn Around Timing

Turn Around Timing Optimization

Auto is enabled in general case.

tRDRD_sg