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FM2-A75MA-E35
Инструкция по эксплуатации Страница: 44

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FM2-A75MA-E35
Инструкция по эксплуатации Страница: 44

MSI FM2-A75MA-E35 — параметры тайминга памяти: улучшение производительности DRAM [44/164]

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En-32

MS-7721 Manboard

tCL

Controls CAS latency whch determnes the tmng delay (n clock cycles) of startng

a read command after recevng data.

tRCD

Determnes the tmng of the transton from RAS (row address strobe) to CAS

(column address strobe). The less clock cycles, the faster the DRAM performance.

tRP

Controls number of cycles for RAS (row address strobe) to be allowed to pre-charge.

If nsu󰘲cent tme s allowed for RAS to accumulate before DRAM refresh, the DRAM

may fal to retan data. Ths tem apples only when synchronous DRAM s nstalled

n the system.

tRAS

Determnes the tme RAS (row address strobe) takes to read from and wrte to

memory cell.

tRFC

Ths settng determnes the tme RFC takes to read from and wrte to a memory

cell.

tWR

Determnes mnmum tme nterval between end of wrte data burst and the start of a

pre-charge command. Allows sense ampl󰘰ers to restore data to cell.

tWTR

Determnes mnmum tme nterval between the end of wrte data burst and the start

of a column-read command; allows I/O gatng to overdrve sense ampl󰘰es before

read command starts.

tRRD

Spec󰘰es the actve-to-actve delay of d󰘯erent banks.

tRTP

Tme nterval between a read and a precharge command.

tFAW

Ths tem s used to set the tFAW (four actvate wndow delay) tmng.

tWCL

Ths tem s used to set the tWCL (Wrte CAS Latency) tmng.

tCKE

Ths tem s used to set the Pulse Wdth for DRAM module.

tRTL

Ths tem s used to set Round Trp Latency settngs.

Advanced Channel 1/ 2 Tmng Con󰘰guraton

Press <Enter> to enter the sub-menu. And you can set the advanced memory tmng

for each channel.

Spread Spectrum

Ths functon reduces the EMI (Electromagnetc Interference) generated by modulatng

clock generator pulses.

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MSI FM2-A75MA-E35 — параметры тайминга памяти: улучшение производительности DRAM [44/164]

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