CDIL 2N5087-CDI Инструкция по эксплуатации онлайн
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CDIL 2N5087-CDI Инструкция по эксплуатации онлайн

CDIL 2N5172-CDI Инструкция по эксплуатации онлайн
PNP SILICON PLANAR EPITAXIAL TRANSISTORS 2N5086 2N5087
TO-92
Plastic Package
Amplifier Transistors
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
UNITS
Collector Emitter Voltage
V
CEO
V
Collector Base Voltage
V
CBO
V
Emitter Base Voltage
V
EBO
V
Collector Current Continuous
I
C
mA
Power Dissipation @ T
a
=25ºC
P
D
mW
Derate above 25ºC
mW/ºC
Power Dissipation @ T
c
=25ºC
P
D
W
Derate above 25ºC
mW/ºC
Operating And Storage Junction
Temperature Range
T
j
, T
stg
ºC
THERMAL CHARACTERISTICS
Junction to Case
R
th (j-c)
ºC/W
Junction to Ambient in free air
*R
th (j-a)
ºC/W
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MAX
UNITS
Collector Emitter Voltage
*V
CEO
I
C
=1mA, I
B
=0
50 V
Collector Base Voltage
V
CBO
I
C
=100µA, I
E
=0 50 V
Collector Cut off Current
I
CBO
V
CB
=10V, I
E
= 0
10 nA
V
CB
=35V, I
E
= 0
50 nA
Emitter Cut off Current
I
EBO
V
EB
=3V, I
C
= 0
50 nA
DC Current Gain
h
FE
V
CE
=5V, I
C
=100µA
2N5086
150 500
2N5087
250 800
V
CE
=5V, I
C
=1mA
2N5086
150
2N5087
250
*V
CE
=5V, I
C
=10mA
2N5086
150
2N5087
250
Collector Emitter Saturation Voltage
V
CE (sat)
I
C
=10mA, I
B
=1mA
0.30 V
Base Emitter On Voltage
V
BE (on)
V
CE
=5V, I
C
=1mA
0.85 V
*Pulse Test: Pulse Width<300µµs, Duty Cycle<2%
2N5086_5087Rev_1 171103E
50
For Lead Free Parts,
Device Part # will be
Prefixed with "T"
VALUE
50
50
3.0
83.3
200
- 55 to +150
625
5.0
1.5
12
E
B
C
Continental Device India Limited
Data Sheet Page 1 of 5
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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