CDIL BC182B-CDI [2/5] Npn silicon planar epitaxial transistors bc182 a b bc183 a b c bc184 b c
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CDIL BC182B-CDI [2/5] Npn silicon planar epitaxial transistors bc182 a b bc183 a b c bc184 b c

CDIL BC182B-CDI [2/5] Npn silicon planar epitaxial transistors bc182 a b bc183 a b c bc184 b c
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
BC182, A, B
BC183, A, B, C
BC184, B, C
TO-92
Plastic Package
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION MIN MAX UNITS
DC Current Gain
h
FE
I
C
=10
µ
A, V
CE
=5V
BC182/183 40
BC184 100
I
C
=2mA, V
CE
=5V
BC182 120 500
BC183 120 800
BC184 240 800
I
C
=100mA, V
CE
=5V
BC182 80
BC183 80
BC184 130
Collector Emitter Saturation Voltage
V
CE (sat)
I
C
=10mA, I
B
=0.5mA
0.25 V
*I
C
=100mA, I
B
0.60
V
Base Emitter Saturation Voltage
V
BE (sat)
*I
C
=100mA, I
B
=5mA
1.2 V
Base Emitter On Voltage
V
BE (on)
I
C
=100
µ
A, V
CE
=5V
V
I
C
=2mA, V
CE
=5V
0.55 0.70 V
I
C
=100mA, V
CE
=5V
V
SMALL SIGNAL CHARACTERISTICS
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
MAX UNITS
Transistors Frequency
f
T
I
C
=0.5mA, V
CE
=3V, f=100MHz
BC182 MHz
BC183
MHz
BC184 MHz
I
C
=10mA, V
CE
=5V, f=100MHz
150 MHz
Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
5.0 pF
Input Capacitance
C
ib
V
BE
=0.5V, I
C
=0, f=1MHz
pF
Small Signal Current Gain
h
fe
I
C
=2mA, V
CE
=5V, f=1KHz
BC182
125 500
BC183
125 900
BC184
240 900
BC182A/BC183A
125 260
BC182B/183B/184B 240 500
BC183C/184C
450 900
Noise Figure NF
I
C
=0.2mA, V
CE
=5V, R
S
=2 k
Ω
,
f=30Hz to 15KHz
BC184
4.0 dB
I
C
=0.2mA, V
CE
=5V, R
S
=2 k
Ω
,
f=1kHz, F=200Hz
BC182/BC183
10 dB
BC184
4.0 dB
*Pulse Test: Pulse Time 300
µµ
s, Duty Cycle=2%
BC182_184Rev_1 201205E
120
140
8.0
100
0.50
0.83
For Lead Free Parts, Device
Part # will be Prefixed with
"T"
TYP
TYP
C
B
E
Continental Device India Limited
Data Sheet Page 2 of 5

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