CDIL BC556-CDI Инструкция по эксплуатации онлайн
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CDIL BC556-CDI Инструкция по эксплуатации онлайн

CDIL BC547-CDI Инструкция по эксплуатации онлайн
NPN SILICON EPITAXIAL PLANAR TRANSISTORS
BC546_BC550
TO-92
Plastic Package
For switching and AF amplifier application
ABSOLUTE MAXIMUM RATINGS (T
a
=25ºC unless specified otherwise)
DESCRIPTION SYMBOL BC546 BC547 BC550 BC548
Collector Base Voltage
V
CBO
80 50 V
Collector Emitter Voltage
V
CEO
65 45 V
Emitter Base Voltage
V
EBO
V
Collector Current (DC)
I
C
mA
Collector Current - Peak
I
CM
mA
Power Dissipation
P
tot
mW
Storage Temperature
T
stg
ºC
Junction Temperature
T
j
ºC
Characteristics at Ta = 25ºC
DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITS
I
C
=2mA, V
CE
=5V 75 800
A
110
220
B
200
450
C
420
800
I
C
=10mA, I
=0.5mA
- 0.25 V
I
C
=100mA, I
=5mA
- 0.60 V
I
C
=2mA, V
CE
=5V
0.55 0.70 V
I
C
=10mA, V
CE
=5V
- 0.77 V
Collector Base Cut off Current
I
CBO
V
CB
=30V, I
E
=0
- 15 nA
Emitter Base Cut off Current
I
EBO
V
EB
=5V
- 100 nA
Collector Base Breakdown Voltage
BC546 80 -
BC547 , BC550 50 -
BC548 , BC549 30 -
Collector Emitter Breakdown Voltage
BC546 65 -
BC547 , BC550 45 -
BC548 , BC549 30 -
Emitter Base Breakdown Voltage
V
(BR)EBO
I
E
=10µA
6 - V
Transition Frequency
f
T
I
C
=10mA, V
CE
=5V,f=100MHz
100 - MHz
Collector Base Capacitance
C
cb
V
CB
=10V, f=1MHz
- 6.0 pF
BC546_550Rev_6 231112E
h
FE
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter on Voltage
30
30
6
- 65 to +150
500
V
(BR)CBO
V
(BR)CEO
BC549 UNITS
150
V
CE(Sat)
V
BE(on)
100
200
V
I
C
=100µA
I
C
=2mA
V
Continental Device India Limited
Data Sheet Page 1 of 3

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