CDIL BC109C-CDI [2/4] Npn silicon planar transistors bc107 a b c bc108 a b c bc109 a b c

CDIL BC109C-CDI [2/4] Npn silicon planar transistors bc107 a b c bc108 a b c bc109 a b c
NPN SILICON PLANAR TRANSISTORS BC107/A/B/C
BC108/A/B/C
BC109/A/B/C
TO-18
Metal Can Package
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Collector Emitter Saturation Voltage
V
CE (sat)
I
C
=10mA, I
B
=0.5mA
0.25 V
I
C
=100mA, I
B
=5mA
0.60 V
Base Emitter Saturation Voltage
V
BE (sat)
I
C
=10mA, I
B
=0.5mA
0.83 V
I
C
=100mA, I
B
=5mA
1.05 V
Base Emitter On Voltage
V
BE (on)
I
C
=2mA, V
CE
=5V
0.55 0.70 V
I
C
=10mA, V
CE
=5V
0.77 V
Collector Knee Voltage
V
CE (K)
I
C
=10mA, I
B
=the value for which
I
C
=11mA at V
CE
=1V
0.60 V
Transition frequency
f
T
I
C
=10mA, V
CE
=5V, f=100MHz
150 MHz
Output Capacitance
C
obo
V
CB
=10V, I
E
=0, f=1MHz
4.5 pF
I
C
=0.2mA, V
CE
=5V, Rg=2K,
f=30Hz to 15KHz BC109
f=1KHz, F=200Hz, BC109
4.0
4.0
dB
dB
BC107/108 10 dB
SMALL SIGNAL CHARACTERISTICS
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Small Signal Current Gain
h
fe
I
C
=2mA, V
CE
=5V, f=1KHz
BC107 125 500
BC108 125 900
BC109 240 900
A Group 125 260
B Group 240 500
C Group 450 900
Input Impedance
h
ie
I
C
=2mA, V
CE
=5V, f=1KHz
1.6 4.5
K
3.2 8.5
K
6.0 15
K
Output Admittance
h
oe
I
C
=2mA, V
CE
=5V, f=1KHz
30
µ
mhos
60
µ
mhos
110
µ
mhos
BC107_109Rev_3 231202E
Noise Figure
NF
Continental Device India Limited
Data Sheet Page 2 of 4
Скачать