CDIL BC857C-CDI Инструкция по эксплуатации онлайн

CDIL BC857C-CDI Инструкция по эксплуатации онлайн
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC856, BC857, BC858
SOT-23
Formed SMD Package
Marking
BC856 =3D
BC856A=3A
BC856B=3B
BC857 =3H
BC857A=3E
BC857B=3F
BC857C=3G
BC858 =3M
BC858A=3J
BC858B=3K
BC858C=3L
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL
BC856 BC857 BC858
Collector Base Voltage
V
CBO
80 50 30
Collector Emitter Voltage
V
CEO
65 45 30
Emitter Base Voltage
V
EBO
5
Collector Current (DC)
I
C
100
Collector Current - Peak
I
CM
200
Power Dissipation
P
tot
200
Storage Temperature
T
stg
-65 to +150
Junction Temperature
T
j
150
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS
DC Current Gain
h
FE
I
C
=2mA, V
CE
=5V
A
125
250
B 220 475
C 420 800
Collector Cut off Current
I
CBO
V
CB
=30V, I
E
=0
15 nA
Collector Base Voltage
V
CBO
I
C
=10
A, I
E
=0
BC856 80 V
BC857 50 V
BC858 30 V
Collector Emitter Voltage
V
CES
I
C
=10
A, V
BE
=0
BC856 80 V
BC857 50 V
BC858 30 V
BC856_858 Rev_2 141210P
mA
mW
º C
º C
For Lead Free Parts, Device Part #
will be Prefixed with "T"
UNITS
V
V
V
mA
PIN CONFIGURATION (PNP)
1 = BASE
2 = EMITTER
3 = COLLECTOR
2
1
3
Continental Device India Limited
Data Sheet Page 1 of 4
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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