DACO Semiconductor DAMIA1100N60-DCO Инструкция по эксплуатации онлайн
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DACO Semiconductor DAMIA1100N60-DCO Инструкция по эксплуатации онлайн

DACO Semiconductor DAMI660N60-DCO Инструкция по эксплуатации онлайн
DACO SEMICONDUCTOR CO., LTD.
®
DAMI560N100
Ɍ!
V
DSS
= 100V
Ɍ! Fully Avalanche Rated
Ɍ! Pb Free & RoHS Compliant
Ɍ! Backlighting
Ɍ! Power Converters
Ɍ! Synchronous Rectifiers
Parameter Symbol Ratings Unit
Drain-Source Voltage V
DS
100 V
Gate-Source Voltage V
GS
±20 V
Drain Current-Continuous
C
I
C°52=
D
560
445
A
Drain Current-Pulsed
@T
C
=25° C
Note1
I
DM
1600 A
Maximum Power Dissipation P
D
890 W
Storage Temperature Range T
STG
-50 to +150 ° C
T egnaR erutarepmeT noitcnuJ gnitarepO
J
-50 to +150 ° C
Thermal Resistance, Junction-to-Case R
JC
0.10 ° C/W
ZZZGDFRVHPLFRPWZ

N-Channel Enhancement Mode MOSFET
Features
Applications
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Ɍ!
R
DS(ON)
͐
< 1.1P#9 9
GS
VIsolation Voltage (A.C. 1 minute)
iso
2500 V
MMounting torque (M4 Screw)
d
1.3 N
m
Ɍ! Isolation Type Package
Ɍ! Electrically Isolation base plate
-XQ
Preliminary
@ T
C
C°100= @ T
'LPHQVLRQVLQLQFKHVDQGPLOOLPHWHUV
SOT-227
G
S
S
D
G
A
D
H
C
K
I
F
O
E
J
M
ØL
N
B
Q
DIMENSIONS
DIM
MM
INCHES
MIN
MXA
MIN
MXA
.500
.307
.029
.073
1.487
1.250
.931
.996
.586
.492
.161
.161
.181
.165
1.184
.217
.519
.322
.033
.082
1.502
1.258
.956
1.007
.594
.516
.169
.169
.191
.177
1.192
.244
12.70
7.80
.75
1.85
37.80
31.75
23.65
25.30
14.90
12.50
4.10
4.10
4.60
4.20
30.10
5.50
13.60
8.20
.84
2.10
38.20
32.00
24.30
25.60
15.10
13.10
4.30
4.30
4.95
4.50
30.30
6.20
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
M4*8
P

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