ASRock Z490 Phantom Gaming 4/ac — параметры таймингов для активных банков памяти DDR4 [68/103]

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before an active bank can be precharged.

Refresh Cycle Time (tRFC)

e number of clocks from a Refresh command until the rst Activate command to

the same rank.

RAS to RAS Delay (tRRD_L)

e number of clocks between two rows activated in dierent banks of the same

rank.

RAS to RAS Delay (tRRD_S)

e number of clocks between two rows activated in dierent banks of the same

rank.

Write to Read Delay (tWTR_L)

e number of clocks between the last valid write operation and the next read command to

the same internal bank.

Write to Read Delay (tWTR_S)

e number of clocks between the last valid write operation and the next read command to

the same internal bank.

Read to Precharge (tRTP)

e number of clocks that are inserted between a read command to a row pre-

charge command to the same rank.

Four Activate Window (tFAW)

e time window in which four activates are allowed the same rank.

CAS Write Latency (tCWL)

Congure CAS Write Latency.

Third Timing

tREFI

Congure refresh cycles at an average periodic interval.

tCKE

Congure the period of time the DDR4 initiates a minimum of one refresh

command internally once it enters Self-Refresh mode.