ASRock H310M-HDV/M.2 — оптимизация настроек памяти: частота и тайминги [48/77]

Превью страниц Страница 48 / 77

English

H310M-HDV/M.2

DRAM Reference Clock

Select Auto for optimized settings.

DRAM Frequency

If [Auto] is selected, the motherboard will detect the memory module(s) inserted

and assign the appropriate frequency automatically.

DRAM Clock

Choose a frequency to override to clock delay for memory training. DRAM Clock

controls memory training only if ASRock Timing Optimization is disabled.

Primary Timing

CAS# Latency (tCL)

e time between sending a column address to the memory and the beginning of the data

in response.

RAS# to CAS# Delay and Row Precharge (tRCDtRP)

RAS# to CAS# Delay : e number of clock cycles required between the opening of

a row of memory and accessing columns within it.

Row Precharge: e number of clock cycles required between the issuing of the

precharge command and opening the next row.

RAS# Active Time (tRAS)

e number of clock cycles required between a bank active command and issuing the

precharge command.

Command Rate (CR)

e delay between when a memory chip is selected and when the rst active command can

be issued.

Secondary Timing

Write Recovery Time (tWR)

e amount of delay that must elapse aer the completion of a valid write operation,

before an active bank can be precharged.

Refresh Cycle Time (tRFC)

e number of clocks from a Refresh command until the rst Activate command to

the same rank.