ASRock H310CM-HDV — настройка DRAM: Оптимизация производительности и энергопотребления [46/73]

English

H310CM-HDV / H310CM-DVS

Congure the current limit of the GT slice. A lower limit can protect the CPU and

save power, while a higher limit may improve performance.

DRAM Conguration

DRAM Tweaker

Fine tune the DRAM settings by leaving marks in checkboxes. Click OK to conrm and

apply your new settings.

DRAM Timing Conguration

DRAM Frequency Clock

Select Auto for optimized settings.

DRAM Frequency

If [Auto] is selected, the motherboard will detect the memory module(s) inserted

and assign the appropriate frequency automatically.

Primary Timing

CAS# Latency (tCL)

e time between sending a column address to the memory and the beginning of the data

in response.

RAS# to CAS# Delay and Row Precharge (tRCDtRP)

RAS# to CAS# Delay : e number of clock cycles required between the opening of

a row of memory and accessing columns within it.

Row Precharge: e number of clock cycles required between the issuing of the

precharge command and opening the next row.

RAS# Active Time (tRAS)

e number of clock cycles required between a bank active command and issuing the

precharge command.

Command Rate (CR)

e delay between when a memory chip is selected and when the rst active command can

be issued.

Secondary Timing

Write Recovery Time (tWR)

e amount of delay that must elapse aer the completion of a valid write operation,

before an active bank can be precharged.