CDIL BFY51-CDI [2/4] Silicon planar transistors bfy50 bfy51 bfy52
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CDIL BFY51-CDI [2/4] Silicon planar transistors bfy50 bfy51 bfy52

CDIL BFY51-CDI [2/4] Silicon planar transistors bfy50 bfy51 bfy52
SILICON PLANAR TRANSISTORS BFY50, BFY51, BFY52
TO-39
Metal Can Package
DESCRIPTION SYMBOL BFY50 BFY51 BFY52 UNITS
Emitter Cut off Current
I
EBO
V
EB
=5V, I
C
=0
<50 <50 <50
µA
T
j
=100
o
C
V
EB
=5V, I
C
=0
<2.8 <2.8 <2.8
µA
DC Current Gain
h
FE
I
C
=10mA,V
CE
=6V
>20
>30 >30
I
C
=150mA,V
CE
=6V
>30
>40 >60
I
C
=1A,V
CE
=6V
>15 >15 >15
Collector Emitter Saturation Voltage
V
CE
(
Sat
)
*I
C
=150mA,I
B
=15mA
<0.2
<0.35 <0.35 V
I
C
=1A,I
B
=100mA
<0.1
<1.6 <1.6 V
Base Emitter Saturation Voltage
V
BE(Sat)
*I
C
=1A,I
B
=100mA
<2.0
<2.0 <2.0 V
DYNAMIC CHARACTERISTICS
Small Signal Current Gain
| h
fe
|I
C
=1mA, V
CE
=6V,
>10
>30 >30
f=1kHz
Output Capacitance
C
ob
V
CB
=12V, f=500kHz
<12
<12 <12 pF
Transistors Frequency
f
T
I
C
=50mA, V
CE
=6V
>60
>50 >50 MHz
f=20MHz
*Pulse Test: Pulse Width= 300µs, Duty Cycle =1%
Continental Device India Limited
Data Sheet Page 2 of 4

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