CDIL 2N3055-CDI Инструкция по эксплуатации онлайн
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CDIL 2N3055-CDI Инструкция по эксплуатации онлайн

CDIL 2N3055-CDI Инструкция по эксплуатации онлайн
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR POWER TRANSISTORS
2N3055 NPN
MJ2955 PNP
TO-3
Metal Can Package
General Purpose Switching and Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL
VALUE
UNITS
Collector Base Voltage
V
CBO
100
V
Collector Emitter Voltage
V
CEO
60
V
Collector Emitter Voltage(R
BE
=100Ω)
V
CER
70
V
Emitter Base Voltage
V
EBO
7 V
Collector Current Continuous
I
C
15 A
Base Current
I
B
7 A
Power Dissipation @ T
c
=25ºC P
tot
115 W
Derate Above 25ºC 0.657 W/ºC
Operating and Storage Junction
T
j
, T
stg
- 65 to +200 ºC
Temperature Range
THERMAL RESISTANCE
Junction to Case
R
th(j-c)
1.52 ºC/W
ELECTRICAL CHARACTERISTICS (T
C
=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITS
Collector Emitter Sustaing Voltage
V
CEO(sus)
* I
C
=200mA, I
B
=0
60 V
Collector Emitter Sustaing Voltage
V
CER(sus)
*
I
C
=200mA, R
BE
=100Ω
70 V
Collector Cut off Current
I
CEX
V
CE
=100V, V
BE
=(off)=1.5V
1.0 mA
T
c
=150ºC
V
CE
=100V, V
BE
=(off)=1.5V
5.0
Collector Cut off Current
I
CEO
V
CE
=30V, I
B
=0
0.7 mA
Emitter Cut off Current
I
EBO
V
BE
=7V, I
C
=0
5.0 mA
Collector Emitter Saturation Voltage
V
CE(Sat)
* I
C
=4A, I
B
=400mA
1.1 V
I
C
=10A, I
B
=3.3A
3.0
Base Emitter on Voltage
V
BE(on)
* I
C
=4A, V
CE
=4V
1.5 V
DC Current Gain
h
FE
* I
C
=4A, V
CE
=4V
20 70
I
C
=10A, V
CE
=4V
5
2N3055_MJ2955 Rev 1 01042014E
Continental Device India Limited
Data Sheet
Page 1 of 5

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