CDIL 2N6433-CDI Инструкция по эксплуатации онлайн
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CDIL 2N6433-CDI Инструкция по эксплуатации онлайн

CDIL 2N6433-CDI Инструкция по эксплуатации онлайн
NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3700
2N3701
TO-18
General purpose amplifier
ABSOLUTE MAXIMUM RATINGS.
DESCRIPTION SYMBOL VALUE UNIT
Collector -Base Voltage
VCBO 140 V
Collector -Emitter Voltage
VCEO 80 V
Emitter -Base Voltage
VEBO 7.0 V
Collector Current
IC 1.0 A
Power Dissipation @Ta=25 deg C
PD 500 mW
Derate Above 25 deg C
2.85 mW/deg C
@TC=25 deg C
PD 1.8 W
Derate Above 25 deg C
10.6 mW/deg C
Operating And Storage Junction
Tj, Tstg -65 to +200 deg C
Temperature Range
THERMAL RESISTANCE
Junction to Case
Rth(j-c) 70 deg C/W
Junction to Ambient
Rth(j-a) 245 deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT
Collector-Cut off Current
ICBO VCB=90V, IE=0 - 10 nA
VCB=90V, IE=0 - 10 uA
Emitter-Cut off Current
IEBO VEB=5V, IC=0 - 10 nA
Collector -Base Voltage
VCBO IC=100uA, IE=-0 140 - V
Collector -Emitter Voltage
VCEO* IC=30mA, IB=0 80 - V
Emitter -Base Voltage
VEBO IE=100uA, IC=-0 7.0 - V
Collector Emitter (Sat) Voltage
VCE(Sat)* IC=150mA,IB=15mA - 0.2 V
IC=500mA,IB=50mA - 0.5 V
Base Emitter (Sat) Voltage
VBE(Sat) * IC=150mA,IB=15mA - 1.1 V
2N3700 2N3701
DC Current Gain
hFE* IC=0.1mA,VCE=10V >50 30-100
IC=10mA,VCE=10V >90 40-12O
IC=150mA,VCE=10V 100-300 40-12O
IC=500mA,VCE=10V >50 30-100
IC=1A,VCE=10V >15 >15
Tc= -55 deg C
IC=150mA,VCE=10V >40 -
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company

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