CDIL BD436-CDI [2/4] Epitaxial silicon power transistors bd433 bd434 bd435 bd436 bd437 bd438 bd439 bd440 bd441 bd442 npn pnp

CDIL BD436-CDI [2/4] Epitaxial silicon power transistors bd433 bd434 bd435 bd436 bd437 bd438 bd439 bd440 bd441 bd442 npn pnp
EPITAXIAL SILICON POWER TRANSISTORS BD433 BD434
BD435 BD436
BD437 BD438
BD439 BD440
BD441 BD442
NPN PNP
TO126
Plastic Package
ELECTRICAL CHARACTERISTICS (T
C
=25ºC unless specified otherwise)
DESCRIPTION SYMBOL BD433 BD435 BD437 BD439 BD441
BD434 BD436 BD438 BD440 BD442
DC Current Gain
*h
FE
>40 >40 >30 >20 >15
>85 >85 >85 >40 >40
>50 >50 >40 >25 >15
f
T
>3.0 MHz
*Pulsed Pulse Duration=300
µµ
s, Duty Cycle=1.5%
Matched
Pairs
*h
FE1
/ h
FE2
I
C
=500mA, V
CE
=1V ALL
UNIT
<1.4
I
C
=500mA, V
CE
=1V
I
C
=2.0A, V
CE
=1V
I
C
=10mA, V
CE
=5V
TEST CONDITION
I
C
=250mA, V
CE
=1V ALL
Current Gain Bandwidth
Product
B
C
E
Continental Device India Limited
Data Sheet Page 2 of 4
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