CDIL MJE350-CDI Инструкция по эксплуатации онлайн
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CDIL MJE350-CDI Инструкция по эксплуатации онлайн

CDIL MJE340-CDI Инструкция по эксплуатации онлайн
NPN EPITAXIAL SILICON POWER TRANSISTOR
CSD882H-P
(9HY)
TO126
Plastic Package
Marking:- SD
882H-P
+DATE CODE
Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL
Collector Base Voltage
V
CBO
Collector Emitter Voltage
V
CEO
Emitter Base Voltage
V
EBO
Collector Current (DC)
I
C
Collector Current (Pulse)
I
C
Base Current (DC)
I
B
Total Power Dissipation @ T
a=
25ºC P
D
Total Power Dissipation @ T
c=
25ºC P
D
Junction Temperature
T
j
Storage Temperature Range
T
stg
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TYP MAX
Collector Cut Off Current
I
CBO
1.0
Emitter Cut Off Current
I
EBO
1.0
Collector Emitter Saturation Voltage
*V
CE (sat)
0.5
Base Emitter Saturation Voltage
*V
BE (sat)
2.0
DC Current Gain
*h
FE
30
**h
FE
60 400
Output Capacitance
C
o
45
Current Gain Bandwidth Product
f
T
90
**h
FE
Classification
Q 100 - 200
P 160 - 320 E 200 - 400
*Pulse test: Pulse Width <300µµs, Duty Cycle <2%
CSD882H-P Rev_2 240508E
UNIT
V
V
R 60 - 120
V
TEST CONDITION
A
A
W
W
A
I
C
=2.0A, I
B
=0.2A
I
C
=2.0A, I
B
=0.2A
- 65 to +150
0.6
ºC
ºC
I
C
=0, V
EB
=3V
pF
V
I
E
=0, V
CB
=10V, f=1MHz
I
C
=0.1A, V
CE
=5V
MIN
VALUE
60
30
MHz
UNIT
µA
µA
V
5.0
I
C
=20mA, V
CE
=2V
I
C
=1A, V
CE
=2V
1.0
10
150
I
E
=0, V
CB
=60V
3.0
7.0
B
C
E
Continental Device India Limited
Data Sheet Page 1 of 3
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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