CDIL BC857B-CDI [2/4] Pnp silicon planar epitaxial transistors bc856 bc857 bc858

CDIL BC857C-CDI [2/4] Pnp silicon planar epitaxial transistors bc856 bc857 bc858
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC856, BC857, BC858
SOT-23
Formed SMD Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS
Collector Emitter Voltage
V
CEO
I
C
=1mA, I
B
=0
BC856 65 V
BC857 45 V
BC858 30 V
Emitter Base Voltage
V
EBO
I
E
=1µA, I
C
=0
5 V
Collector Emitter Saturation Voltage
V
CE(Sat)
I
C
=10mA,I
B
=0.5mA
0.30 V
I
C
=100mA,I
B
=5mA
0.65 V
Base Emitter on Voltage
V
BE(on)
I
C
=2mA,V
CE
=5V
0.6 0.75 V
I
C
=10mA,V
CE
=5V
0.82 V
Transition Frequency
f
T
I
C
=10mA, V
CE
=5V,f=100MHz
100 MHz
Output Capacitance
C
ob
V
CB
=10V, f=1MHz
6.0 pF
Noise Figure NF
I
C
=0.2mA, V
CE
=5V
10 dB
R
s
=2k
, f=1KHz
BC856_858 Rev_2 141210P
For Lead Free Parts, Device Part #
will be Prefixed with "T"
PIN CONFIGURATION (PNP)
1 = BASE
2 = EMITTER
3 = COLLECTOR
1
3
Continental Device India Limited
Data Sheet Page 2 of 4

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