DACO Semiconductor DAMI300N150-DCO [3/5] Pulse width seconds
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DACO Semiconductor DAMI300N150-DCO [3/5] Pulse width seconds

DACO Semiconductor DAMI300N150-DCO [3/5] Pulse width seconds
Fig 1.
Power dissipation
Fig 3.
Safe operating area
Fig 5.
Typ. output characteristics
Fig 2.
Drain current
Fig 4.
Maximium Transient Thermal
Impedance
Fig 6. Typ. drain-source on resistance
DACO SEMICONDUCTOR CO., LTD.
®
DAMI300N150
Typical Characteristics
ZZZGDFRVHPLFRPWZ

-XO\
T
C
[°C]
P
tot
[W]
0 50 100 150 200
0
64
128
192
256
320
384
448
P
tot
=f(T
C
)
I
D
=f(T
C
); V
GS
9
T
C
[°C]
I
D
[A]
0 50 100 150 200
0
36
72
108
144
180
216
I
D
[A]
10
-1
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
10
3
10
4
wV
wV
wV
PV
I
D
=f(V
DS
); T
C
=25°C; D=0;parameter: t
p
0.001
0.010
0.100
1010.10.010.0010.00010.00001
Pulse Width - Seconds
R
(th)JC
[ ºC / W]
0.300
V
DS
[V]
I
D
[A]
0 0.6 1.2 1.5
0
50
100
150
I
D
=f(V
DS
); T
j
=25°C;parameter: V
GS
I
D
[A]
R
DS(on)
>P@
0 100 200 300 400 500 600
0
2.0
4.0
6.0
8.0
9
9
9
9
R
DS(on)
=f(I
D
); T
j
=25°C;parameter: V
GS
V
DS
[V]
PV
'&
200
9
0.3 0.9
9
9
9
9

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