DACO Semiconductor DAMI320N100-DCO [3/5] Pulse width seconds
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DACO Semiconductor DAMI320N100-DCO [3/5] Pulse width seconds

DACO Semiconductor DAMI330N60-DCO [3/5] Pulse width seconds
Fig 1.
Power dissipation
Fig 3.
Safe operating area
Fig 5.
Typ. output characteristics
Fig 2.
Drain current
Fig 4.
Maximium Transient Thermal
Impedance
Fig 6. Typ. drain-source on resistance
DACO SEMICONDUCTOR CO., LTD.
®
DAMI320N100
Typical Characteristics
ZZZGDFRVHPLFRPWZ

-XQ
T
C
[°C]
P
tot
[W]
0 50 100 150 200
0
85
170
255
340
425
510
595
P
tot
=f(T
C
)
I
D
=f(T
C
); V
GS
9
T
C
[°C]
I
D
[A]
0 50 100 150 200
0
70
140
210
280
350
420
I
D
[A]
10
-1
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
10
3
10
4
wV
wV
wV
PV
I
D
=f(V
DS
); T
C
=25°C; D=0;parameter: t
p
0.001
0.010
0.100
1010.10.010.0010.00010.00001
Pulse Width - Seconds
R
(th)JC
[ ºC / W]
0.300
V
DS
[V]
I
D
[A]
I
D
=f(V
DS
); T
j
=25°C;parameter: V
GS
I
D
[A]
R
DS(on)
>P@
0 100 200 300 400 500 600
0
1.0
2.0
3.0
4.0
9
9
9
9
R
DS(on)
=f(I
D
); T
j
=25°C;parameter: V
GS
V
DS
[V]
PV
'&
01.50.6 1.20.3 0.9
0
200
300
400
100
9
9
9
9

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