DACO Semiconductor DAMI450N100-DCO [3/5] Pulse width seconds
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DACO Semiconductor DAMI450N100-DCO [3/5] Pulse width seconds

DACO Semiconductor DAMI450N100-DCO [3/5] Pulse width seconds
Fig 1.
Power dissipation
Fig 3.
Safe operating area
Fig 5.
Typ. output characteristics
Fig 2.
Drain current
Fig 4.
Maximium Transient Thermal
Impedance
Fig 6. Typ. drain-source on resistance
DACO SEMICONDUCTOR CO., LTD.
®
DAMI450N100
Typical Characteristics
ZZZGDFRVHPLFRPWZ

-XO\
T
C
[°C]
P
tot
[W]
0 50 100 150 200
0
104
208
312
416
520
624
728
P
tot
=f(T
C
)
I
D
=f(T
C
); V
GS
9
T
C
[°C]
I
D
[A]
0 50 100 150 200
0
50
100
150
200
250
300
350
I
D
[A]
10
-1
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
10
3
10
4
wV
wV
wV
PV
I
D
=f(V
DS
); T
C
=25°C; D=0;parameter: t
p
0.001
0.010
0.100
1010.10.010.0010.00010.00001
Pulse Width - Seconds
R
(th)JC
[ ºC / W]
0.300
V
DS
[V]
I
D
[A]
I
D
=f(V
DS
); T
j
=25°C;parameter: V
GS
I
D
[A]
R
DS(on)
>P@
0 100 200 300 400 500 600
0
0.5
1.0
1.5
2.0
2.5
9
9
9
9
R
DS(on)
=f(I
D
); T
j
=25°C;parameter: V
GS
V
DS
[V]
PV
'&
0 0.4 0.6 1.2
0
100
300
400
200
450
0.2 0.8 1.0
9
9
9
9

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