DACO Semiconductor DAMIA1100N100-DCO [3/5] Pulse width seconds
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DACO Semiconductor DAMIA1100N100-DCO [3/5] Pulse width seconds

DACO Semiconductor DAMI660N60-DCO [3/5] Pulse width seconds
Fig 1.
Power dissipation
Fig 3.
Safe operating area
Fig 5.
Typ. output characteristics
Fig 2.
Drain current
Fig 4.
Maximium Transient Thermal
Impedance
Fig 6. Typ. drain-source on resistance
DACO SEMICONDUCTOR CO., LTD.
®
DAMI560N100
Typical Characteristics
ZZZGDFRVHPLFRPWZ

-XQ
T
C
[°C]
P
tot
[W]
0 50 100 150 200
0
178
356
534
712
890
1068
1246
P
tot
=f(T
C
)
I
D
=f(T
C
); V
GS
9
T
C
[°C]
I
D
[A]
0 50 100 150 200
0
70
140
210
280
350
420
560
I
D
[A]
10
-1
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
10
3
10
4
wV
wV
wV
PV
'&
I
D
=f(V
DS
); T
C
=25°C; D=0;parameter: t
p
0.001
0.010
0.100
1010.10.010.0010.00010.00001
Pulse Width - Seconds
R
(th)JC
[ ºC / W]
0.300
V
DS
[V]
I
D
[A]
00.6
0
200
300
I
D
=f(V
DS
); T
j
=25°C;parameter: V
GS
I
D
[A]
R
DS(on)
>P@
0 100 200 300 400 500 600
0
0.5
1.0
1.5
2.0
2.5
9
9
9
9
R
DS(on)
=f(I
D
); T
j
=25°C;parameter: V
GS
V
DS
[V]
PV
100
400
500
0.3 1.5
0.9 1.2
9
9
9
9

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