ASRock H670M Pro RS [65/103] Cas write latency tcwl

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of memory and accessing columns within it.

Row Precharge: e number of clock cycles required between the issuing of the precharge

command and opening the next row.

RAS# Active Time (tRAS)

e number of clock cycles required between a bank active command and issuing the

precharge command.

Command Rate (CR)

e delay between when a memory chip is selected and when the rst active command can

be issued.

Secondary Timing

Write Recovery Time (tWR)

e amount of delay that must elapse aer the completion of a valid write

operation, before an active bank can be precharged.

Refresh Cycle Time (tRFC)

e number of clocks from a Refresh command until the rst Activate command to

the same rank.

RAS to RAS Delay (tRRD_L)

e number of clocks between two rows activated in dierent banks of the same

rank.

RAS to RAS Delay (tRRD_S)

e number of clocks between two rows activated in dierent banks of the same

rank.

Read to Precharge (tRTP)

e number of clocks that are inserted between a read command to a row pre-

charge command to the same rank.

Four Activate Window (tFAW)

e time window in which four activates are allowed the same rank.

CAS Write Latency (tCWL)

Congure CAS Write Latency.

Third Timing