ASRock h81 pro btc — параметры конфигурации DRAM: Latency, Delay и Recovery [48/75]

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DRAM Conguration

CAS# Latency (tCL)

e time between sending a column address to the memory and the beginning of the data

in response.

RAS# to CAS# Delay (tRCD)

e number of clock cycles required between the opening of a row of memory and

accessing columns within it.

Row Precharge Time (tRP)

e number of clock cycles required between the issuing of the precharge command

and opening the next row.

RAS# Active Time (tRAS)

e number of clock cycles required between a bank active command and issuing the

precharge command.

Command Rate (CR)

e delay between when a memory chip is selected and when the rst active command can

be issued.

Write Recovery Time (tWR)

e amount of delay that must elapse aer the completion of a valid write operation,

before an active bank can be precharged.