CDIL CMBD1202-CDI [2/5] Cmbd1201 1202 1203
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CDIL CMBD1202-CDI [2/5] Cmbd1201 1202 1203

Continental Device India Limited Data Sheet Page 2 of 5
Reverse recovery time when switched from
I
F
= 10 mA to I
R
= 10 mA; R
L
= 100 Ω ;
measured at I
R
= 1 mA t
rr
< 4ns
RATINGS (per diode) (at T
A
= 25°C unless otherwise specified)
Limiting values
Continuous reverse voltage V
R
max. 75 V
Repetitive peak reverse voltage V
RRM
max. 100 V
Repetitive peak forward current I
FRM
max. 500 mA
Forward current I
F
max. 215 mA
Non-repetitive peak forward current (per crystal)
t = 1 µs I
FSM
max. 4 A
t = 1 ms I
FSM
max. 1.0 A
t = 1 s I
FSM
max. 0.5 A
Storage temperature Tstg –55 to +150 ° C
Junction temperature Tj max. 150 ° C
THERMAL RESISTANCE
From junction to ambient R
th j–a
= 500 K/W
CHARACTERISTICS (per diode)
T
j
= 25 °C unless otherwise specified
Forward voltage
I
F
= 10 mA V
F
< 0.855 V
I
F
= 200 mA V
F
< 1.10 V
Reverse currents
V
R
= 20 V I
R
< 25 nA
V
R
= 75 V I
R
< 5µA
V
R
= 25 V; T
j
= 150 °C I
R
< 30 µA
Forward recovery voltage
I
F
= 10 mA; t
p
= 20 ns V
fr
< 1.75 V
Recovery charge
I
F
= 10 mA to V
R
= 5V; R = 100 Ω Q
s
<45pC
Diode capacitance
V
R
= 0; f = 1 MHz C
d
< 2pF
Reverse recovery time when switched from
I
F
= 10 mA to I
R
= 10 mA; R
L
= 100 Ω ;
measured at I
R
= 1 mA t
rr
< 4ns
CMBD1201_1205 Rev_1 220808E
CMBD1201, 1202, 1203
CMBD1204, 1205

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