CDIL 2N5416-CDI Инструкция по эксплуатации онлайн
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CDIL 2N5416-CDI Инструкция по эксплуатации онлайн

CDIL 2N5416-CDI Инструкция по эксплуатации онлайн
PNP SILICON HIGH VOLTAGE TRANSISTOR 2N 5415, 16
TO-39
Metal Can Package
High Speed Switching and Linear amplifier Appliances in Military,
Industrial and Commercial Equipment.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL 2N5415 2N5416 UNITS
Collector Emitter Voltage
V
CEO
200 300 V
Collector Base Voltage
V
CBO
200 350 V
Emitter Base Voltage
V
EBO
46V
Collector Current Continuous
I
C
(--------------------1------------------
)
A
Base Current Continuous
I
B
(-----------------0.5------------------
)
A
Power Dissipation @ Ta=50ºC
P
D
(--------------------1------------------
)
W
Derate Above 25ºC mW/ºC
Power Dissipation@ Tc=25ºC
P
D
(------------------10------------------- W
Derate Above 25ºC
Junction Temperature Tj (--------------------200----------------
-
mW/ºC
Operating And Storage Junction
T
stg
-65 to +200 ºC
Temperature Range
THERMAL RESISTANCE
Junction to Ambient
R
th(j-a)
150 ºC/W
Junction to Case
R
th(j-c)
17.5 ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION 2N5415 2N5416 UNITS
Collector Emitter Breakdown Voltage
BV
CEO(sus)
*I
C
=50mA,I
B
=0
>200 >300 V
Collector Cut off Current
I
CBO
V
CB
=175V, I
E
=0
<50
µA
V
CB
=280V, I
E
=0
<50
µA
Collector Cutoff Current
I
CEO
V
CE
=150V, I
B
=0
<50
µA
V
CE
=250V, I
B
=0
<50
µA
Emitter Cut off Current
I
EBO
V
EB
=4V, I
C
=0
<20
µA
V
EB
=6V, I
C
=0
<20
µA
Collector Emitter Saturation Voltage
V
CE(Sat)
I
C
=50mA,I
B
=5mA
<2.5 <2 V
Base Emitter Saturation Voltage
V
BE(Sat)
I
C
=50mA,I
B
=5mA
<1.5 <1.5 V
DC Current Gain
h
FE
*I
C
=50mA,V
CE
=10V
30-150 30-120
Continental Device India Limited
Data Sheet Page 1 of 4
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company

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