CDIL 2N5682-CDI Инструкция по эксплуатации онлайн
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CDIL 2N5682-CDI Инструкция по эксплуатации онлайн

CDIL 2N5682-CDI Инструкция по эксплуатации онлайн
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5681
2N5680 2N5682
PNP NPN
TO-39 TO-39
These Are High Voltage & High Current, General Purpose Transistors
ABSOLUTE MAXIMUM RATINGS.
DESCRIPTION SYMBOL 2N5679 2N5680 UNITS
2N5681 2N5682
Collector -Emitter Voltage
VCEO 100 120 V
Collector -Base Voltage
VCBO 100 120 V
Emitter -Base Voltage
VEBO 4.0 V
Collector Current Continuous
IC 1.0 A
Base Current
IB 0.5 A
Power Dissipation @Ta=25 degC
PD 1.0 W
Derate Above 25deg C
5.7 mW/deg C
Power Dissipation @Tc=25 degC
PD 10 W
Derate Above 25deg C
57 mW/deg C
Operating And Storage Junction
Tj, Tstg -65 to +200 deg C
Temperature Range
THERMAL RESISTANCE
Junction to Case
Rth(j-c) 17.5 deg C/W
Junction to Ambient
Rth(j-a) 175 deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION 2N5679 2N5680 UNITS
2N5681 2N5682
Collector -Emitter Voltage
VCEO(sus) IC=10mA,IB=0 >100 >120 V
Collector-Cut off Current
ICBO VCB=100V, IE=0 <1.0 - uA
VCB=120V, IE=0 - <1.0 uA
ICEO VCE=70V, IB=0 <10 - uA
VCE=80V, IB=0 - <10 uA
ICEX VCE=100V,VEB=1.5V <1.0 - uA
VCE=120V,VEB=1.5V - <1.0 uA
TC=150 deg C
VCE=100V,VEB=1.5V <1.0 - mA
VCE=120V,VEB=1.5V - <1.0 mA
Emitter-Cut off Current
IEBO VEB=4V, IC=0 <1.0 <1.0 uA
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company

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