DACO Semiconductor DAMH280N200-DCO [3/6] Daco semiconductor co ltd
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DACO Semiconductor DAMH280N200-DCO [3/6] Daco semiconductor co ltd

DACO Semiconductor DAMH280N200-DCO [3/6] Daco semiconductor co ltd
Fig 1.
Power dissipation
Fig 3.
Safe operating area
Fig 5.
Typ. output characteristics
Fig 2.
Drain current
Fig 4.
Maximium Transient Thermal
Impedance
Fig 6. Typ. drain-source on resistance
DACO SEMICONDUCTOR CO., LTD.
®
DAMH220N200
Typical Characteristics
ZZZGDFRVHPLFRPWZ

-DQ
T
C
[°C]
P
tot
[W]
0 50 100 150 200
0
112
224
336
448
560
672
784
P
tot
=f(T
C
)
I
D
=f(T
C
); V
GS
9
T
C
[°C]
I
D
[A]
0 50 100 150 200
0
36
72
108
144
180
216
I
D
[A]
10
-1
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
10
3
10
4
wV
wV
wV
PV
I
D
=f(V
DS
); T
C
=25°C; D=0;parameter: t
p
0.001
0.010
0.100
1010.10.010.0010.00010.00001
Pulse Width - Seconds
R
(th)JC
[ ºC / W]
0.300
I
D
=f(V
DS
); T
j
=25°C;parameter: V
GS
I
D
[A]
R
DS(on)
>P@
0 100 200 300 400 500 600
4
6
8
10
12
R
DS(on)
=f(I
D
); T
j
=25°C;parameter: V
GS
V
DS
[V]
PV
'&
9
9
9
9
9
V
DS
[V]
I
D
[A]
0 0.3 0.6 0.9 1.2 1.5
0
50
100
200
150
9
9
9
9

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