DACO Semiconductor DAMI280N200-DCO Инструкция по эксплуатации онлайн
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DACO Semiconductor DAMI280N200-DCO Инструкция по эксплуатации онлайн

DACO Semiconductor DAMI280N200-DCO Инструкция по эксплуатации онлайн
DACO SEMICONDUCTOR CO., LTD.
®
DAMI280N200
Ɍ!
V
DSS
= 200V
Ɍ! Fully Avalanche Rated
Ɍ! Pb Free & RoHS Compliant
Ɍ! Backlighting
Ɍ! Power Converters
Ɍ! Synchronous Rectifiers
Parameter Symbol Ratings Unit
Drain-Source Voltage V
DS
200 V
Gate-Source Voltage V
GS
±20 V
Drain Current-Continuous
C
I
C°52=
D
280
210
A
Drain Current-Pulsed
@T
C
=25° C
Note1
I
DM
850 A
Maximum Power Dissipation P
D
800 W
Storage Temperature Range T
STG
-50 to +150 ° C
T egnaR erutarepmeT noitcnuJ gnitarepO
J
-50 to +150 ° C
Thermal Resistance, Junction-to-Case R
JC
0.18 ° C/W
ZZZGDFRVHPLFRPWZ

N-Channel Enhancement Mode MOSFET
Features
Applications
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Ɍ!
R
DS(ON)
͐
< 6.0P#9 9
GS
VIsolation Voltage (A.C. 1 minute)
iso
2500 V
MMounting torque (M4 Screw)
d
1.3 N
m
Ɍ! Isolation Type Package
Ɍ! Electrically Isolation base plate
-XQ
@ T
C
C°100= @ T
Preliminary
'LPHQVLRQVLQLQFKHVDQGPLOOLPHWHUV
SOT-227
G
S
S
D
G
A
D
H
C
K
I
F
O
E
J
M
ØL
N
B
Q
DIMENSIONS
DIM
MM
INCHES
MIN
MXA
MIN
MXA
.500
.307
.029
.073



.996









.322
.033



.956











.75



23.65
25.30







5.50





32.00

25.60






30.30
6.20
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
0
P

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