DACO Semiconductor DAMI280N200-DCO [4/5] Volts v
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DACO Semiconductor DAMI280N200-DCO [4/5] Volts v

DACO Semiconductor DAMI280N200-DCO [4/5] Volts v
Fig 9.
Drain-source on-state resistance
Fig 11.
Typ. capacitances
Fig 10.
Typ. gate threshold voltage
Fig 12.
Typical forward characteristics
of reverse diode
DACO SEMICONDUCTOR CO., LTD.
®
DAMI280N200
Typical Characteristics
ZZZGDFRVHPLFRPWZ

-XQ
T
J
[°C]
V
DS
[V]
C [pF]
R
DS(on)
=f(T
j
); I
D
=150A; V
GS
=10V
V
GS(th)
=f(T
j
); V
GS
=V
DS
;parameter: I
D
C=f(V
DS
); V
GS
=0V; f=1MHz
R
DS(on)
>P@
T
j
[°C]
-60 -20 20 60 100 140 180
4
5
6
7
8
V
GS(th)
[V]
-60 -20 20 60 100 140 180
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
P$
r&
020406080100
10
1
10
2
10
3
10
4
10
5
&UVV
&RVV
&LVV
Volts [V]
Amp [A]
0 0.4 0.6 0.8 1.0 1.2
10
0
10
1
10
2
10
3
1.4 1.6
r&
Fig 7. Typ. transfer characteristics Fig 8. Typ. forward transconductance
I
D
=f(V
GS
);| V
DS
|>2|I
D
|R
DS(on)max
;parameter:T
j
2 3 4 67
0
80
160
240
320
400
I
D
[A]
V
GS
[V]
g
fs
=f(I
D
); T
j
=25°C
5
8
r&
r&
PD[
W\S
I
D[A]
g [S]
0 50 100 150 200
0
28
56
84
112
140
168
fs

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