DACO Semiconductor DAMI280N200-DCO [3/5] Pulse width seconds
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DACO Semiconductor DAMI280N200-DCO [3/5] Pulse width seconds

DACO Semiconductor DAMI280N200-DCO [3/5] Pulse width seconds
Fig 1.
Power dissipation
Fig 3.
Safe operating area
Fig 5.
Typ. output characteristics
Fig 2.
Drain current
Fig 4.
Maximium Transient Thermal
Impedance
Fig 6. Typ. drain-source on resistance
DACO SEMICONDUCTOR CO., LTD.
®
DAMI280N200
Typical Characteristics
ZZZGDFRVHPLFRPWZ

-XQ
T
C
[°C]
P
tot
[W]
0 50 100 150 200
0
160
320
480
640
800
960
1120
P
tot
=f(T
C
)
I
D
=f(T
C
); V
GS
9
T
C
[°C]
I
D
[A]
0 50 100 150 200
0
42
84
126
168
210
252
I
D
[A]
10
-1
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
10
3
10
4
wV
wV
wV
PV
I
D
=f(V
DS
); T
C
=25°C; D=0;parameter: t
p
0.001
0.010
0.100
1010.10.010.0010.00010.00001
Pulse Width - Seconds
R
(th)JC
[ ºC / W]
0.300
I
D
=f(V
DS
); T
j
=25°C;parameter: V
GS
I
D
[A]
R
DS(on)
>P@
0 100 200 300 400 500 600
2
4
6
8
10
R
DS(on)
=f(I
D
); T
j
=25°C;parameter: V
GS
V
DS
[V]
PV
'&
9
9
9
9
9
V
DS
[V]
I
D
[A]
0 0.3 0.6 0.9 1.2
0
50
100
150
200
1.5
250
9
9
9
9

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