DACO Semiconductor DAMI280N200-DCO [2/5] Drain source on state resistance
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DACO Semiconductor DAMI280N200-DCO [2/5] Drain source on state resistance

DACO Semiconductor DAMI280N200-DCO [2/5] Drain source on state resistance
Parameter Symbol Conditions Min. Typ. Max. Unit
OFF Characteristics
Drain-Source Breakdown Voltage BV
DSS
V
GS
=0VǴ
ǴǴ
ǴI
DS
=3mA
200
- - V
Zero Gate Voltage Drain Current I
DSS
V
GS
=0VǴ
ǴǴ
ǴV
DS
=200V
- - 50 uA
I egakaeL ydoB-etaG
GSS
V
GS
=±20VǴ
ǴǴ
ǴV
DS
=0V
- -
200
nA
ON Characteristics
Gate Threshold Voltage V
TH
V
DS
=V
GS
Ǵ
ǴǴ
ǴI
DS
=8mA
2.0
2.5 3.5 V
V
GS
=10VǴ
ǴǴ
ǴI
DS
=100A
-
5.8
6.0 P
Dynamic Characteristics
C ecnaticapaC tupnI
iss
-
60770
-
C ecnaticapaC tuptuO
oss
- 1328
-
Reverse Transfer Capacitance C
rss
V
DS
=25V
V
GS
=0V
Freq.=1MHz
- 778
-
pF
Switching Characteristics
t emiT yaleD nO-nruT
d(on)
-
140
-
Rise Time t
r
- 56 -
t emiT yaleD ffO-nruT
d(off)
- 292 -
Fall Time t
f
V
DD
=75V
V
GS
=10V
I
DS
=150A
- 56
-
ns
Total Gate Charge at 10V Q
g
- 322
-
Gate to Source Charge
Q
gs
- 265 -
Gate to Drain Charge
Q
gd
V
DS
=10V
V
GS
=10V
I
DS
=100A
- 180 -
nC
Reverse Diode Characteristics
Drain-Source Diode Forward Voltage V
F
T
J
=25°CǴ
ǴǴ
ǴI
F
=100A
-
-
0.85 V
DACO SEMICONDUCTOR CO., LTD.
®
DAMI280N200
Notes:
1. Pulse Test: Pulse Width 300͔s, Duty Cycle > 2%.
ZZZGDFRVHPLFRPWZ

Electrical Characteristics @ T
J
=25°C (unless otherwise specified)
-XQ
Forward Transconductance
g
fs
∣V
DS
∣>2∣I ∣R
D
- 124
-S
Note1
Diode Continuous Forward Current
Diode Pulsed Current
Reverse Recovery time T
RR
I
F,pulse
I
F
-
-
-
-
-
-
210
850
360
A
A
ns
Note1
Gate Resistance R
G
-1.62.9
I
I
F
=0.5V，I
R
=1.0A，
RR
=0.25A
R
G
=1.6
DS(on)M
Ǵ
ǴǴ
Ǵ
I
D
=100A
Drain-Source On-State Resistance R
DS(on)

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