DACO Semiconductor DAMI360N150-DCO [2/5] Daco semiconductor co ltd
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DACO Semiconductor DAMI360N150-DCO [2/5] Daco semiconductor co ltd

DACO Semiconductor DAMI360N150-DCO [2/5] Daco semiconductor co ltd
DACO SEMICONDUCTOR CO., LTD.
®
DAMI360N150
ZZZGDFRVHPLFRPWZ

-XO\
Parameter Symbol Conditions Min. Typ. Max. Unit
OFF Characteristics
Drain-Source Breakdown Voltage BV
DSS
V
GS
=0VǴ
ǴǴ
ǴI
DS
=3mA
150
- - V
Zero Gate Voltage Drain Current I
DSS
V
GS
=0VǴ
ǴǴ
ǴV
DS
=150V
- - 50 uA
I egakaeL ydoB-etaG
GSS
V
GS
=±20VǴ
ǴǴ
ǴV
DS
=0V
- -
200
nA
ON Characteristics
Gate Threshold Voltage V
TH
V
DS
=V
GS
Ǵ
ǴǴ
ǴI
DS
=8mA
2.0
3.5 V
Drain-Source On-State Resistance
V
GS
=10VǴ
ǴǴ
ǴI
DS
=100A
-
3.0
3.2 P
Dynamic Characteristics
C ecnaticapaC tupnI
iss
-
61000
-
C ecnaticapaC tuptuO
oss
- 1600
-
Reverse Transfer Capacitance C
rss
V
DS
=25V
V
GS
=0V
Freq.=1MHz
-
1100
-
pF
Switching Characteristics
t emiT yaleD nO-nruT
d(on)
-
Rise Time t
r
t emiT yaleD ffO-nruT
d(off)
Fall Time t
f
V
DS
=75V
V
GS
=10V
I
DS
=180A
ns
Total Gate Charge at 10V Q
g
Gate to Source Charge
Q
gs
Gate to Drain Charge
Q
gd
V
DS
=75V
V
GS
=10V
I
DS
=180A
nC
Reverse Diode Characteristics
Drain-Source Diode Forward Voltage
V
F
T
J
=25°CǴ
ǴǴ
ǴI
F
=100A
-
-
0.85 V
Notes:
1. Pulse Test: Pulse Width 300͔s, Duty Cycle > 2%.
Electrical Characteristics @ T
J
=25°C (unless otherwise specified)
Forward Transconductance
g
fs
- 125
-S
Diode Continuous Forward Current
Diode Pulsed Current
Reverse Recovery time T
RR
I
F,pulse
I
F
-
-
-
-
-
-
220
1200
380
A
A
ns
Note1
Gate Resistance R
G
-1.62.9
I
I
F
=0.5V，I
R
=1.0A，
RR
=0.25A
∣V
DS
∣>2∣I ∣R
D
Note1
DS(on)M
Ǵ
ǴǴ
Ǵ
I
D
=100A
88
-
-
42
-
-
208
-
-
40
-
-
258
-
-
135
-
-
113
-
2.5
R
DS(on)

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