DACO Semiconductor DAMI360N150-DCO [3/5] Pulse width seconds
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DACO Semiconductor DAMI360N150-DCO [3/5] Pulse width seconds

DACO Semiconductor DAMI360N150-DCO [3/5] Pulse width seconds
Fig 1.
Power dissipation
Fig 5.
Typ. output characteristics
Fig 2.
Drain current
Fig 4.
Maximium Transient Thermal
Impedance
Fig 6. Typ. drain-source on resistance
DACO SEMICONDUCTOR CO., LTD.
®
DAMI360N150
Typical Characteristics
ZZZGDFRVHPLFRPWZ

-XO\
T
C
[°C]
P
tot
[W]
0 50 100 150 200
0
100
200
300
400
500
600
700
P
tot
=f(T
C
)
I
D
=f(T
C
); V
GS
9
T
C
[°C]
I
D
[A]
0 50 100 150 200
0
44
88
132
176
220
264
0.001
0.010
0.100
1010.10.010.0010.00010.00001
Pulse Width - Seconds
R
(th)JC
[ ºC / W]
0.300
V
DS
[V]
I
D
[A]
0 0.5 1.0 1.5
0
50
100
150
I
D
=f(V
DS
); T
j
=25°C;parameter: V
GS
I
D
[A]
R
DS(on)
>P@
0 100 200 300 400 500 600
0
2.0
4.0
6.0
8.0
9
9
9
9
R
DS(on)
=f(I
D
); T
j
=25°C;parameter: V
GS
200
9
250
Fig 3.
Safe operating area
I
D
[A]
10
-1
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
10
3
10
4
wV
wV
wV
PV
I
D
=f(V
DS
); T
C
=25°C; D=0;parameter: t
p
V
DS
[V]
PV
'&
9
9
9
9

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