CDIL 2N4238-CDI Инструкция по эксплуатации онлайн
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CDIL 2N4238-CDI Инструкция по эксплуатации онлайн

CDIL 2N4238-CDI Инструкция по эксплуатации онлайн
NPN SILICON PLANAR TRANSISTORS
2N4237, 2N4238
2N4239
TO-39
Metal Can Package
General Purpose Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
2N4237
2N4238
UNIT
Collector Emitter Voltage
V
CEO
40 60 V
Collector Base Voltage
V
CBO
50 80 V
Emitter Base Voltage
V
EBO
6.0 V
Base Current
I
B
500 mA
Collector Current Continuous
I
C
1.0 A
Power Dissipation @ T
a
=25ºC P
D
1.0 W
Derate Above 25ºC
5.3 mW/ ºC
Power Dissipation @ T
c
=25ºC P
D
6.0 W
Derate Above 25ºC
34 mW/ ºC
Operating and Storage Junction
Temperature Range
T
j
, T
stg
- 65 to +200 ºC
THERMAL CHARACTERISTICS
Junction to Case
R
th (j-c)
29 ºC/W
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL
TEST CONDITION
2N4237
2N4239
UNIT
Collector Emitter Voltage
V
CEO
I
C
=1mA, I
B
=0
40 60 80 V
Collector Cut Off Current
I
CEX
V
CE
=50V, V
EB
=1.5V
0.1 mA
V
CE
=80V, V
EB
=1.5V
0.1 mA
V
CE
=100V, V
EB
=1.5V
0.1 mA
T
C
=150ºC
V
CE
=30V, V
EB
=1.5V
1.0 mA
V
CE
=50V, V
EB
=1.5V
1.0 mA
V
CE
=70V, V
EB
=1.5V
1.0 mA
MIN
TYP
MAX
Collector Cut Off Current
I
CBO
V
CB
=Rated V
CBO
, I
E
=0
0.1 mA
Collector Cut Off Current
I
CEO
V
CE
=Rated V
CEO
, I
B
=0
0.07 mA
Emitter Cut Off Current
I
EBO
V
EB
=6V, I
C
=0
0.5 mA
DC Current Gain
*h
FE
I
C
=50mA, V
CE
=1V
30
I
C
=250mA, V
CE
=1V
30 150
I
C
=500mA, V
CE
=1V
30
I
C
=1A, V
CE
=1V
15
*Pulse Test: Pulse Width < 300µµs, Duty Cycle < 2%
2N4237_4239Rev121004E
2N4239
80
100
Continental Device India Limited
Data Sheet Page 1 of 4
Continental Device India Limited
An ISO/TS 16949 and ISO 9001 Certified Company

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