DACO Semiconductor DACMH160N1200-DCO [5/5] Dacmh160n1200 5

DACO Semiconductor DACMH160N1200-DCO [5/5] Dacmh160n1200 5
DACO SEMICONDUCTOR CO., LTD.
®
Typical Characteristics
www.dacosemi.com.tw
- 5 -
Jan 2018
DACMH160N1200
Gate-Source Voltage, V
GS
(V)
Gate Charge, Q
G
(nC)
Figure 15. Gate Charge Characteristics
Figure 13. Peak forward surge current of reverse
diode
0 50 75 100 125 150 175
0
80
160
240
320
400
Amp(A)
Cycles
Number Of Cycles At 60Hz
8.3ms Single Half
Sine Wave
JEDEC method T = 25°C
J
Figure 14. Typical reverse diode characteristics
Volts (%)
Instantaneous reverse
leakage current (uA)
0 20 60 80 100
0.01
0.1
1.0
10
4010 50 70 9030
T = 25°C
J
T = 125°C
J
Figure 16. Inductive Switching Energy vs. Temperature
Figure 17. Timing vs. R
G(ext)
Figure 18. Resistive Switching Time Description
Switching Loss (mJ)
Juncon Temperature, T
J
(°C)
-5
0
5
10
15
20
0 100 200 300 400 500
Condions:
I
DS
= 100 A
I
GS
= 50 mA
V
DS
= 800 V
T
J
= 25 °C
0
50
100
150
200
250
5 7 9 11 13 15 17 19
Time (nsec)
External Gate Resistor (Ω)
t
d(on)
t
f(on)
Condions:
V
GS
= +20V/-5V
R
Load
= 8 Ohms
V
DD
= 800V
T
J
= 25 °C
t
r(o)
t
d(o)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0 25 50 75 100 125 150
E
ON
E
OFF
Condions:
V
GS
= +20V/-5V
R
G
= 5.1 Ohms
V
DD
= 800V
I
DS
= 100 A, L = 200 µH

Содержание

Похожие устройства

Скачать