DACO Semiconductor DACMI200N1200-DCO Инструкция по эксплуатации онлайн
DACO SEMICONDUCTOR CO., LTD.
®
DACMI200N1200
◆
V
DSS
= 1200V
◆ Fully Avalanche Rated
◆ Pb Free & RoHS Compliant
Parameter Symbol Ratings Unit
Drain-Source Voltage V
DS
1200 V
Gate-Source Voltage V
GS
-10/+20 V
Drain Current-Continuous
C
I
C°52=
D
200
125
A
Drain Current-Pulsed
@ T
C
=25° C
Note1
I
DM
500 A
Maximum Power Dissipation P
D
980 W
Storage Temperature Range T
STG
-50 to +150 ° C
T egnaR erutarepmeT noitcnuJ gnitarepO
J
-50 to +150 ° C
Thermal Resistance, Junction-to-Case R
JC
0.13 ° C/W
www.dacosemi.com.tw
- 1 -
Silicon Carbide Enhancement Mode MOSFET
Features
Applications
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
◆
R
DS(ON)
θ
< 15 mΩ@ V = 20 V
GS
VIsolation Voltage (A.C. 1 minute)
iso
4000 V
MMounting torque (M5 Screw)
d
3-5 N
m
◆ Isolation Type Package
◆ Electrically Isolation base plate
Jan 2018
@ T
C
C°100= @ T
◆ Power Converters
◆ Motor Drive
◆ Solar Inverters ◆ Switch Mode Power Supplies
◆ Battery Chargers
Dimensions in inches and (millimeters)
SOT-227
G
S
S
D
Preliminary
A
D
H
C
K
I
F
O
E
J
M
ØL
NB
P
DIMENSIONS
DIM
MM
INCHES
MIN
MXA
MIN
MXA
.500
.307
.029
.077
1.487
1.250
.931
.996
.586
.492
.161
.161
.181
.165
1.184
.519
.322
.033
.082
1.502
1.258
.956
1.007
.594
.516
.169
.169
.191
.177
1.192
12.70
7.80
.75
1.95
37.80
31.75
23.65
25.30
14.90
12.50
4.10
4.10
4.60
4.20
30.10
13.60
8.20
.84
2.10
38.20
32.00
24.30
25.60
15.10
13.10
4.30
4.30
4.95
4.50
30.30
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
M4*8
Содержание
- 15 mω v 20 v 1
- Absolute maximum ratings tc 25 c unless otherwise noted 1
- Applications 1
- Battery chargers 1
- Dacmh200n1200 1 1
- Dacmi200n1200 1
- Daco semiconductor co ltd 1
- Electrically isolation base plate 1
- Features 1
- Fully avalanche rated 1
- Isolation type package 1
- Jan 2018 1
- Motor drive 1
- Pb free rohs compliant 1
- Power converters 1
- Silicon carbide enhancement mode mosfet 1
- Solar inverters switch mode power supplies 1
- Dacmh200n1200 2 2
- Dacmi200n1200 2
- Daco semiconductor co ltd 2
- Www dacosemi com tw 2
- Dacmh200n1200 3 3
- Dacmi200n1200 3
- Daco semiconductor co ltd 3
- Www dacosemi com tw 3
- 2 4 6 8 10 12 14 4
- 50 25 0 25 50 75 100 125 150 4
- Capacitance pf 4
- Capacitances vs drain source voltage 0 1 kv 4
- Dacmh200n1200 4 4
- Dacmi200n1200 4
- Daco semiconductor co ltd 4
- Drain source current 4
- Figure 11 4
- Figure 12 forward derating curve of reverse diode 4
- Figure 8 threshold voltage vs temperature 4
- Figure 9 transfer characteristic for various junction temperatures 4
- Gate source voltage 4
- Jan 2018 4
- Junction temperature 4
- On resistance 4
- On resistance vs temperature for various gate source voltage 4
- Threshold voltage 4
- Volts v 4
- Www dacosemi com tw 4
- Dacmh200n1200 5 5
- Dacmi200n1200 5
- Daco semiconductor co ltd 5
- External gate resistor 5
- Instantaneous reverse leakage current ua 5
- Junction temperature 5
- Switching loss mj 5
- Time ns 5
- Www dacosemi com tw 5
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