DACO Semiconductor DACMI200N1200-DCO [2/5] Dacmh200n1200 2
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DACO Semiconductor DACMI200N1200-DCO [2/5] Dacmh200n1200 2

DACO Semiconductor DACMI200N1200-DCO [2/5] Dacmh200n1200 2
Parameter Symbol Conditions Min. Typ. Max. Unit
OFF Characteristics
Drain-Source Breakdown Voltage BV
DSS
V
GS
=0V，
，，
，I
DS
=0.3mA
1200
V
Zero Gate Voltage Drain Current I
DSS
V
GS
=0V，
，，
，V
DS
=1200V
250 uA
I egakaeL ydoB-etaG
GSS
V
GS
=20V ，
，，
，V
DS
=0V 200
nA
ON Characteristics
Gate Threshold Voltage V
TH
V
DS
=V
GS
，
，，
，I
DS
=8mA
2.0
2.5 V
Drain-Source On-State Resistance
R
DS(on)
V
GS
=20V，
，，
，I
DS
=200A
15
mΩ
Dynamic Characteristics
C ecnaticapaC tupnI
iss
7500
-
C ecnaticapaC tuptuO
oss
460
-
Reverse Transfer Capacitance C
rss
V
DS
=800V
V
GS
=0V
Freq.=200kHz
100
-
pF
Switching Characteristics
t emiT yaleD nO-nruT
d(on)
-
Rise Time t
r
32
t emiT yaleD ffO-nruT
d(off)
Fall Time t
f
V
DD
=600V
V
GS
=20V
I
DS
=150A
ns
Total Gate Charge at 10V Q
g
Gate to Source Charge
Q
gs
Gate to Drain Charge
Q
gd
V
DS
=800V
V
GS
=20V
I
DS
=120A
nC
Reverse Diode Characteristics
Drain-Source Diode Forward Voltage V
F
T
J
=25°C，
，，
，I
F
=200A
-
6.5 V
DACO SEMICONDUCTOR CO., LTD.
®
Notes:
1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle > 2%.
www.dacosemi.com.tw
- 2 -
Electrical Characteristics @ T
J
=25°C (unless otherwise specified)
Jan 2018
Forward Transconductance
g
fs
V
DS
-
S
Note1
Diode Continuous Forward Current
Diode Pulsed Current
Reverse Recovery time T
RR
I
F,pulse
I
F
-
-
-
-
-
-
125
500
220
A
A
ns
Note1
Gate Resistance R
G
Ω- 1.6 2.9
I
I
F
=0.5V，I
R
=1.0A，
RR
=0.25A
R
G
=2.5Ω
I
D
=100A
DACMI200N1200
-
-
-
-
-
-
-
13
3.5
55
-
-
-
-
43
-
-
-
-
-
-
-
-
-
-
-
-
-
78
32
382
100
116
-
=20V
，
，，
，
V
AC
=25mV
mJ
Turn-On Switching Energy
Turn-Off Switching Energy
E
on
E
off
V
DD
=600V
，
，，
，
V
GS
=-5V/+20V
I
D
=150A
，
，，
，
R
G(ext)
=2.5Ω
Load =142µH
，
，，
，
T
J
=150°C
1.7
-
0.4
- -
-

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