DACO Semiconductor DACMI160N1200-DCO [3/5] Dacmh160n1200 3
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DACO Semiconductor DACMI160N1200-DCO [3/5] Dacmh160n1200 3

DACO Semiconductor DACMI160N1200-DCO [3/5] Dacmh160n1200 3
DACO SEMICONDUCTOR CO., LTD.
®
Typical Characteristics
www.dacosemi.com.tw
- 3 -
Jan 2018
DACMI160N1200
Figure 1. Maximum Power Dissipation (MOSFET)
Derating vs. Case Temperature
0
100
200
300
400
500
600
700
-40 -20 0 20 40 60 80 100 120 140
Maximum Dissipated Power, P
tot
(W)
Case Temperature, T
C
(°C)
Condions:
T
J
≤ 150 °C
0
42
84
126
168
210
-40 -20 0 20 40 60 80 100 120 140
Drain-Source Connous Current, I
DS (DC)
(A)
Case Temperature, T
C
(°C)
Condions:
T
J
≤ 150 °C
Figure 2. Continous Drain Current (MOSFET)
Derating vs Case Temperature
Figure 3. Maximum Power Dissipation (MOSFET)
Derating vs. Case Temperature
0.01
0.10
1.00
10.00
100.00
1000.00
0.1 1 10 100 1000
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
10 µs
Condions:
T
C
= 25 °C
D = 0,
Parameter: t
p
Limited by R
DS On
Figure 4. MOSFET Junction to Case Thermal
Impedance
Figure 5. Output Characteristics T
J
= 25 ˚C Figure 6. On-Resistance vs. Drain Current
For Various Temperatures
10 ms
DC
100 µs
1 ms
1 µs
10E-6
100E-6
1E-3
10E-3
100E-3
1
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 10
Juncon-Case Thermal Response, Z
th JC
(°C/W)
Time, t
p
(sec)
D = 50%
D = 30%
D = 10%
D = 5%
D = 2%
D = 1%
D = 0.5%
D = 0.2%
Single Pulse
D = t
p
/ T
t
p
T
0
20
40
60
80
100
120
140
160
180
200
0 2 4 6 8 10 12 14
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
V
GS
= 10 V
V
GS
= 15 V
V
GS
= 20 V
Condions:
T
J
= 25 °C
tp < 50 µs
V
GS
= 5 V
0
5
10
15
20
25
0 20 40 60 80 100 120 140 160 180
On Resistance, R
DS On
(mΩ)
Drain Source Current, I
DS
(A)
Co
ndi
ons:
V
GS
= 20 V
t
p
< 50 µs
T
J
= 150 °C
T
J
= 25 °C
T
J
= -55 °C
T
J
= 100 °C

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