Honda CB125 CB160 (1972) [99/139] Refer to fig

Содержание

Похожие устройства

5 4 POWER SOURCE CIRCUIT The rectifying performance of the silicon rectifier is as shown in the figure and is conducted by the silicon rectifying element arrow marked section coupled to the terminal plate The fact that the terminal plate is large in comparison to the rectifying element is due to the increase in heat dissipation and cooling in order to protect the rectifying element The ter minal plates coupled to the rectifying elements are arranged in shape in the rectifying circuits of various systems Refer to Fig 5 47 In the silicon rectifier as shown in the figure high melting point solder is used to position the silicon rectifier body through a base plate on the cooling plate a Additional high melting point solder b and conduction terminal f are coupled by low melting point solder c and wrapped by enclosure resin h and a protective ring i A protective coating is applied to the exterior surface Refer to Fig 5 48 The silicon rectifying element consists of three layers N N and P N consists of pure silicon with an extremely small impurity such as boron aluminum and gallium added P consists of one layer mixed Fig 5 48 Silicon rectifying element with an extremely small quantity of phosphorus arsenic and antimony Due to the electrical characteristic of the impurities in each layer of N and P larger current flows from P N to to P N Due is to difficult this This current flow characteristic from causes rectifying performance Refer to Fig 5 49 In order to remove the rectified current by utilizing the rectifying performance of the silicon rectifying element both surfaces of the silicon rectifying element are employed as electrodes Hence if the ambient conditions of the silicon rectifying element are not satisfactory rectifier defects reduced life etc occur Therefore require both surfaces protection the of the electrode rectifying surface element which is wrapped by solder with a high melting point and the cut surface of the circumference which is covered by a protective coating for added performance Fig 5 49 Rectifier of silcon wafer 93

Скачать