ASRock h110m-gl/d3 [41/69] Cas latency tcl

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H110M-GL/D3

and assign the appropriate frequency automatically.

Primary Timing

CAS# Latency (tCL)

e time between sending a column address to the memory and the beginning of the data

in response.

RAS# to CAS# Delay and Row Precharge (tRCDtRP) O

RAS# to CAS# Delay : e number of clock cycles required between the opening of

a row of memory and accessing columns within it.

Row Precharge: e number of clock cycles required between the issuing of the

precharge command and opening the next row.

RAS# Active Time (tRAS)

e number of clock cycles required between a bank active command and issuing the

precharge command.

Command Rate (CR)

e delay between when a memory chip is selected and when the rst active command can

be issued.

Secondary Timing

Write Recovery Time (tWR)

e amount of delay that must elapse aer the completion of a valid write operation,

before an active bank can be precharged.

Refresh Cycle Time (tRFC)

e number of clocks from a Refresh command until the rst Activate command to

the same rank.

RAS to RAS Delay (tRRD)

e number of clocks between two rows activated in dierent banks of the same

rank.

Write to Read Delay (tWTR)

e number of clocks between the last valid write operation and the next read command to

the same internal bank.