CDIL 1N4148WT-CDI Инструкция по эксплуатации онлайн
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CDIL 1N4148WT-CDI Инструкция по эксплуатации онлайн

CDIL 1N4148WT-CDI Инструкция по эксплуатации онлайн
SILICON EPITAXIAL SWITCHING DIODE
1N4148WS
SOD-323
PLASTIC PCAKAGE
Marking
1N4148WS= A2 with cathode band
Fast Switching Diode
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
UNIT
V
R
V
V
RRM
V
*I
F (AV)
mA
Surge Forward Current t < 1s and T
j
=25ºC I
FSM
mA
Power Dissipation @ T
amb
=25ºC *P
tot
mW
Junction Temperature
T
j
ºC
Storage Temperature Range
T
stg
- 65 to +150 ºC
THERMAL RESISTANCE
*R
th
(j-a)
ºC/W
*Valid provided that electrodes are kept at ambient Temperature
ELECTRICAL CHARACTERISTICS (T
=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
MIN
MAX
UNIT
Forward Voltage
V
F
1.0 V
Reverse Current
I
R
25 nA
50
µ
A
5.0
µA
DYNAMIC CHARACTERISTICS
Diode Capacitance
C
d
V
R
=0V, f=1MHz
4.0 pF
Voltage Rise When Switching On
(tested with 50ms pulses)
V
fr
2.5 ns
.
Rectification Efficiency
ηv
0.45
1N4148WSRev140604E
Reverse Recovery Time
650
4.0 ns
t
rr
TEST CONDITION
I
F
=10mA
V
R
=20V
V
R
=20V, T
j
=150ºC
V
R
=75V
75
Average recified Current half wave rectification
with resistive load f >50 Hz
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
VALUE
100
150
350
150
Junction to Ambient in free air
f=100MHz, V
RF
=2V
200
Measured @ I
R
=1mA
tested with=50mA pulses,
t
p
=0.1µs, rise time=<30 ns, t
p
= (5
to 100) KHZ
I
F
=10mA, to I
R
=60mA
R
L
=100
Ω
Continental Device India Limited
Data Sheet Page 1 of 3
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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