DACO Semiconductor DACMH40N1200-DCO [3/5] Dacmh200n1200 3
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DACO Semiconductor DACMH40N1200-DCO [3/5] Dacmh200n1200 3

DACO Semiconductor DACMH40N1200-DCO [3/5] Dacmh200n1200 3
DACO SEMICONDUCTOR CO., LTD.
®
Typical Characteristics
www.dacosemi.com.tw
- 3 -
Jan 2018
DACMH200N1200
Figure 1. Maximum Power Dissipation (MOSFET)
Derating vs. Case Temperature
0
100
200
300
400
500
600
700
800
900
1000
-40 -20 0 20 40 60 80 100 120 140
Maximum Dissipated Power, P
tot
(W)
Case Temperature, T
C
(°C)
Condions:
T
J
≤ 150 °C
0
50
100
150
200
250
-40 -20 0 20 40 60 80 100 120 140
Drain-Source Connous Current, I
DS (DC)
(A)
Case Temperature, T
C
(°C)
Condions:
T
J
≤ 150 °C
Figure 2. Continous Drain Current (MOSFET)
Derating vs Case Temperature
Figure 3. Maximum Power Dissipation (MOSFET)
Derating vs. Case Temperature
0.01
0.10
1.00
10.00
100.00
1000.00
0.1 1 10 100 1000
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
100 µs
1 ms
10 µs
Condions:
T
C
= 25 °C
D = 0,
Parameter: t
p
100 ms
Limited by R
DS On
100E-6
1E-3
10E-3
100E-3
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 10
Juncon To Case Impedance, Z
thJC
(
o
C/W)
Time, t
p
(s)
0.5
0.3
0.1
0.05
0.02
0.01
SinglePulse
Figure 4. MOSFET Junction to Case Thermal
Impedance
0
60
120
180
240
300
360
0 1 2 3 4 5 6 7 8 9 10
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
Condions:
T
J
= 25 °C
tp < 200 µs
V
GS
= 20 V
V
GS
= 10 V
V
GS
= 18 V
V
GS
= 16 V
V
GS
= 14 V
V
GS
= 12 V
Figure 5. Output Characteristics T
J
= 25 ˚C
0
5
10
15
20
25
30
35
0 50 100 150 200 250 300 350
On Resistance, R
DS On
(mOhms)
Drain-Source Current, I
DS
(A)
Condions:
V
GS
= 20 V
t
p
< 200 µs
T
J
= 150 °C
T
J
= -55 °C
T
J
= 25 °C
Figure 6. On-Resistance vs. Drain Current
For Various Temperatures
DC

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