DACO Semiconductor DACMH40N1200-DCO [5/5] Dacmh200n1200 5
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DACO Semiconductor DACMH40N1200-DCO [5/5] Dacmh200n1200 5

DACO Semiconductor DACMH40N1200-DCO [5/5] Dacmh200n1200 5
DACO SEMICONDUCTOR CO., LTD.
®
Typical Characteristics
www.dacosemi.com.tw
- 5 -
Jan 2018
DACMH200N1200
-5
0
5
10
15
20
25
0 50 100 150 200 250 300 350 400
Gate-Source Voltage, V
GS
(V)
Gate Charge, Q
G
(nC)
Condions:
I
DS
= 120 A
I
GS
= 100 mA
V
DS
= 800 V
T
J
= 25 °C
Figure 15. Gate Charge Characteristics
Figure 13. Peak forward surge current of reverse
diode
0 50 75 100 125 150 175
0
100
200
300
400
500
Amp(A)
Cycles
Number Of Cycles At 60Hz
8.3ms Single Half
Sine Wave
JEDEC method T = 25°C
J
Figure 14. Typical reverse diode characteristics
Volts (%)
Instantaneous reverse
leakage current (uA)
0 20 60 80 100
0.01
0.1
1.0
10
4010 50 70 9030
T = 25°C
J
T = 125°C
J
Figure 16. Inductive Switching Energy vs. Temperature
0
50
100
150
200
250
300
350
400
450
500
0 5 10 15 20 25 30 35 40
Time (ns)
External Gate Resistor, R
G(ext)
(Ohms)
Condions:
T
J
= 25 °C
V
DD
= 600 V
I
DS
= 120 A
V
GS
= -5/+20 V
t
d (off)
t
d (on)
t
f
t
r
Figure 17. Timing vs. R
G(ext)
Figure 18. Resistive Switching Time Description
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 25 50 75 100 125 150 175
Switching Loss (mJ)
Juncon Temperature, T
J
(°C)
E
Off
E
On
E
Total
Condions:
V
DD
= 600 V
R
G(ext)
= 2.5 Ω
I
DS
=120 A
V
GS
= -5/+20 V
L = 142 μH

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