CDIL 1N4148-CDI Инструкция по эксплуатации онлайн
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CDIL 1N4148-CDI Инструкция по эксплуатации онлайн

CDIL 1N4148-CDI Инструкция по эксплуатации онлайн
Continental Device India Pvt. Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
HIGH SPEED SILICON SWITCHING DIODE 1N4148, 1N4448
DO-35
Glass Axial Package
Polarity : Colour band denotes cathode end
General purpose, Industrial, Military and Space applications. Hermetically sealed glass with a stud on either
side of the glass passivated chip provides excellent stability. Extremely low leakage and very high reliability.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
(1)
CHARACTERISTICS SYMBOL VALUE UNIT
Maximum Repetitive Reverse Voltage V
RRM
100 V
Continuous Reverse Voltage V
R
75 V
Average Rectified Forward Current I
(AV)
200 mA
DC Forward Current I
F
300 mA
Recurrent Peak Forward Current I
P
400 mA
Non-Repetitive Peak Forward Surge Current I
FSM
Pulse Width = 1.0s 1.0 A
Pulse Width = 1.0µs 4.0 A
Power Dissipation P
D
500 mW
Storage Temperature Range T
STG
-65 to +200 °C
Operating Junction Temperature Range T
J
-65 to +175 °C
Note 1 : These ratings are limiting values above which the serviceability of the diode may be impaired.
Thermal Characteristics
CHARACTERISTICS SYMBOL VALUE UNIT
Thermal Resistance, Junction to Ambient R
θJA
300 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C, unless otherwise specified)
(2)
CHARACTERISTICS SYMBOL TEST CONDITION MIN MAX UNIT
Forward Voltage
1N4148
V
F
I
F
=10mA 1.0 V
1N4448
I
F
=5mA 0.62 0.72 V
I
F
=100mA 1.0 V
Reverse Leakage I
R
V
R
=20V 25 nA
V
R
=20V; T
A
= 150°C 50 µA
V
R
=75V 5.0 µA
Reverse Breakdown Voltage V
BR
I
R
=100µA 100 V
I
R
=5µA 75 V
Diode Capacitance
1N4148
C
T
V
R
=0; f = 1.0MHz
4pF
1N4448 2 pF
Recverse Recovery Time t
rr
I
F
=10mA to I
R
=60mA,
R
L
=100Ω measured at
I
R
=1mA
4 ns
Note 2 : Non-recurrent square wave P
W
= 8.3ms
1N4148_4448 Rev 3_06122017E
Continental Device India Pvt. Limited Data Sheet Page 1 of 3

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