DACO Semiconductor DACMH120N1200-DCO [3/5] Dacmh120n1200 3
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DACO Semiconductor DACMH120N1200-DCO [3/5] Dacmh120n1200 3

DACO Semiconductor DACMH120N1200-DCO [3/5] Dacmh120n1200 3
DACO SEMICONDUCTOR CO., LTD.
®
Typical Characteristics
www.dacosemi.com.tw
- 3 -
Jan 2018
DACMH120N1200
Figure 1. Maximum Power Dissipation (MOSFET)
Derating vs. Case Temperature
0
100
200
300
400
500
600
-40 -20 0 20 40 60 80 100 120 140
Maximum Dissipated Power, P
tot
Case Temperature, T
C
(°C)
Condions:
T
J
≤ 150 °C
0
30
60
90
120
150
-40 -20 0 20 40 60 80 100 120 140
Drain-Source Connous Current, I
DS (DC)
(A)
Case Temperature, T
C
(°C)
Condions:
T
J
≤ 150 °C
Figure 2. Continous Drain Current (MOSFET)
Derating vs Case Temperature
Figure 3. Maximum Power Dissipation (MOSFET)
Derating vs. Case Temperature
0.01
0.10
1.00
10.00
100.00
1000.00
0.1 1 10 100 1000
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
100 µs
1 ms
10 µs
Condions:
T
C
= 25 °C
D = 0,
Parameter: t
p
100 ms
Limited by R
DS On
Figure 4. MOSFET Junction to Case Thermal
Impedance
Figure 5. Output Characteristics T
J
= 25 ˚C Figure 6. On-Resistance vs. Drain Current
For Various Temperatures
DC
1E-3
10E-3
100E-3
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Juncon To Case Impedance, Z
thJC
(
o
C/W)
Time, t
p
(s)
0.5
0.3
0.1
0.05
0.02
0.01
SinglePulse
0
10
20
30
40
50
60
70
0 20 40 60 80 100 120 140
On Resistance, R
DS On
(mOhms)
Drain-Source Current, I
DS
(A)
Condions:
V
GS
= 20 V
t
p
< 200 µs
T
J
= 175 °C
T
J
= -40 °C
T
J
= 25 °C
0
30
60
90
120
150
0.0 2.5 5.0 7.5 10.0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
Condions:
T
J
= 25 °C
tp < 200 µs
V
GS
= 20 V
V
GS
= 10 V
V
GS
= 18 V
V
GS
= 16 V
V
GS
= 14 V
V
GS
= 12 V

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