DACO Semiconductor DACMH120N1200-DCO [4/5] Dacmh120n1200 4
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DACO Semiconductor DACMH120N1200-DCO [4/5] Dacmh120n1200 4

DACO Semiconductor DACMH120N1200-DCO [4/5] Dacmh120n1200 4
DACO SEMICONDUCTOR CO., LTD.
®
Typical Characteristics
www.dacosemi.com.tw
- 4 -
Jan 2018
DACMH200N1200
Figure 7.
On-Resistance vs. Temperature
For Various Gate-Source Voltage
Figure 8. Threshold Voltage vs. Temperature
Figure 9. Transfer Characteristic for Various
Junction Temperatures
1
10
100
1000
10000
100000
0 200 400 600 800 1000
Capacitance (pF)
Drain-Source Voltage, V
DS
(V)
C
iss
C
oss
Condions:
T
J
= 25 °C
V
AC
= 25 mV
f = 1MHz
C
rss
Figure 10.
Capacitances vs. Drain-Source
Voltage (0 - 1 kV)
Figure 11.
Typical forward characteristics
of reverse diode
Volts (V)
Amp (A)
0 4 6 8 10 12
0
10
100
1000
Figure 12. Forward derating curve of
reverse diode
0 50 75 100 125 150 175
0
19
38
57
76
95
Amp(A)
T
C
(°C)
Single Phase,Half Wave
60Hz Resisve or Inducve Load
T = 25°C
J
0
10
20
30
40
50
60
-50 -25 0 25 50 75 100 125 150 175
On Resistance, R
DS On
(mOhms)
Juncon Temperature, T
J
(°C)
Condions:
I
DS
= 50 A
t
p
< 200 µs
V
GS
= 18 V
V
GS
= 16 V
V
GS
= 14 V
V
GS
= 20 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-50 -25 0 25 50 75 100 125 150 175
Threshold Voltage, V
th
(V)
Juncon Temperature T
J
(°C)
Conditons:
V
DS
= V
GS
I
DS
= 15 mA
0
30
60
90
120
150
0 2 4 6 8 10 12 14
Drain-Source Current, I
DS
(A)
Gate-Source Voltage, V
GS
(V)
Condions:
V
DS
= 20 V
tp < 200 µs
T
J
= 175 °C
T
J
= -40 °C
T
J
= 25 °C

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