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DACO Semiconductor DACMH120N1200-DCO [5/5] Dacmh120n1200 5
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DACO SEMICONDUCTOR CO., LTD.
®
Typical Characteristics
www.dacosemi.com.tw
- 5 -
Jan 2018
DACMH120N1200
Figure 15. Gate Charge Characteristics
Figure 13. Peak forward surge current of reverse
diode
0 50 75 100 125 150 175
0
60
120
180
240
300
Amp(A)
Cycles
Number Of Cycles At 60Hz
8.3ms Single Half
Sine Wave
JEDEC method T = 25°C
J
Figure 14. Typical reverse diode characteristics
Volts (%)
Instantaneous reverse
leakage current (uA)
0 20 60 80 100
0.01
0.1
1.0
10
4010 50 70 9030
T = 25°C
J
T = 125°C
J
Figure 16. Inductive Switching Energy vs. Temperature
Figure 17. Timing vs. R
G(ext)
Figure 18. Resistive Switching Time Description
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 25 50 75 100 125 150 175
Switching Loss (mJ)
Juncon Temperature, T
J
(°C)
E
Off
E
On
E
Total
Condions:
V
DD
= 600 V
R
G(ext)
= 2.5 Ω
I
DS
= 50 A
V
GS
= -5/+20 V
L = 142 μH
-5
0
5
10
15
20
25
0 20 40 60 80 100 120 140 160 180
Gate-Source Voltage, V
GS
(V)
Gate Charge, Q
G
(nC)
Condions:
I
DS
= 50 A
I
GS
= 100 mA
V
DS
= 800 V
T
J
= 25 °C
0
10
20
30
40
50
60
70
80
90
0 4 8 12 16 20
Time (ns)
External Gate Resistor, R
G(ext)
(Ohms)
Condions:
T
J
= 25 °C
V
DD
= 800 V
R
L
= 16 Ω
V
GS
= -5/+20 V
t
d (off)
t
d (on)
t
f
t
r
Содержание
- 10 20 v 1
- 25 mω v 20 v 1
- 50 to 150 c 1
- Applications 1
- Battery chargers 1
- C 100 t 1
- Dacmh120n1200 1
- Dacmh120n1200 1 1
- Daco semiconductor co ltd 1
- Drain current continuous 1
- Drain current pulsed 1
- Drain source voltage 1
- Electrically isolation base plate 1
- Features 1
- Fully avalanche rated 1
- Gate source voltage 1
- Hb 9434 1
- I c 5 2 1
- Isolation type package 1
- Jan 2018 1
- M mounting torque m5 screw 1
- Maximum power dissipation 1
- Motor drive 1
- Parameter symbol ratings unit 1
- Pb free rohs compliant 1
- Power converters 1
- Preliminary 1
- Silicon carbide enhancement mode mosfet 1
- Solar inverters switch mode power supplies 1
- Storage temperature range 1
- T e g n a r e r u t a r e p m e t n o it c n u j g n it a r e p o 1
- Thermal resistance junction to case r 1
- V isolation voltage a c 1 minute 1
- Dacmh120n1200 2
- Dacmh120n1200 2 2
- Daco semiconductor co ltd 2
- Www dacosemi com tw 2
- Dacmh120n1200 3
- Dacmh120n1200 3 3
- Daco semiconductor co ltd 3
- Www dacosemi com tw 3
- Capacitance pf 4
- Capacitances vs drain source voltage 0 1 kv 4
- Dacmh120n1200 4 4
- Dacmh200n1200 4
- Daco semiconductor co ltd 4
- Drain source current 4
- Figure 11 4
- Figure 12 forward derating curve of reverse diode 4
- Figure 9 transfer characteristic for various junction temperatures 4
- Gate source voltage 4
- Jan 2018 4
- Junction temperature 4
- On resistance 4
- On resistance vs temperature for various gate source voltage figure 8 threshold voltage vs temperature 4
- Threshold voltage 4
- Volts v 4
- Www dacosemi com tw 4
- 20 60 80 100 0 1 5
- 50 70 90 30 5
- Dacmh120n1200 5
- Dacmh120n1200 5 5
- Daco semiconductor co ltd 5
- External gate resistor 5
- Gate charge 5
- Gate source voltage 5
- Instantaneous reverse leakage current ua 5
- Junction temperature 5
- Switching loss mj 5
- Time ns 5
- Www dacosemi com tw 5
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