ASRock B650M-HDV/M.2 [35/85] Amd x670 b650 series

AMD X670/B650 Series

RAS# Active Time (tRAS)

e number of clock cycles required between a bank active command and issuing the

precharge command.

RAS# Cycle Time (tRC)

e number of memory clock cycles from activate command to another activate command.

Write Recovery Time (tWR)

e amount of delay that must elapse aer the completion of a valid write operation,

before an active bank can be precharged.

Refresh Cycle Time (tRFC1)

Species the Refresh Recovery Delay Time.

Refresh Cycle Time (tRFC2)

Species the Refresh Recovery Delay Time.

Refresh Cycle Time (tRFCSb)

Species the Refresh Recovery Delay Time.

Read to Precharge (tRTP)

e number of clocks that are inserted between a read command to a row pre-charge

command to the same rank.

RAS to RAS Delay (tRRD_L)

e number of clocks between two rows activated in dierent banks of the same rank.

RAS to RAS Delay (tRRD_S)

e number of clocks between two rows activated in dierent banks of the same rank.

Four Activate Window (tFAW)

Species the time window in which four activates are allowed the same rank.

Write to Read Delay (tWTR_L)

e number of clocks between the last valid write operation and the next read

command to the same internal bank.

Write to Read Delay (tWTR_L)

e number of clocks between the last valid write operation and the next read

command to the same internal bank.